SangJoon Hwang
SangJoon Hwang received B.S, M.S., and Ph.D. degrees in electric engineering from the Korea University in 1994, 1996, and 2008, respectively.
He joined the Samsung Electronics, Hwaseong, South Korea in 1996, where he had successfully led a DRAM design group in 2014 and the Flash design team in 2017 as a Vice President and the Memory Product Planning team in 2019 as as a Senior Vice President. Through leading various backgounds from product planning to design, his experience enhances the overall quality of Samsung DRAM products.
Since 2023, he has been leading the DRAM Product & Technology of the Samsung memory division. His current research interests include architecture for next-generation DRAM and product development utilizing new process technology for new product line-up.
Saraswathy RV
Saraswathy is a PET (Privacy Enhancing Technologies) Engineer in HP’s Global Privacy Engineering Center of Excellence (CoE).
In her role within the CoE, Sara works to apply a variety of PETs to enterprise scale use cases across the company. In her role she blends the theoretical underpinnings of PETs with a practical focus on business value and risk.
She earned her PhD in Mathematics from University of Cincinnati where her research focused on post quantum cryptography.
She has since worked on researching and developing solutions in privacy using multiple technologies including MultiParty Computation (MPC), Fully Homomorphic Encryption (FHE) and Differential Privacy (DP).
SangJoon Hwang
SangJoon Hwang received B.S, M.S., and Ph.D. degrees in electric engineering from the Korea University in 1994, 1996, and 2008, respectively.
He joined the Samsung Electronics, Hwaseong, South Korea in 1996, where he had successfully led a DRAM design group in 2014 and the Flash design team in 2017 as a Vice President and the Memory Product Planning team in 2019 as as a Senior Vice President. Through leading various backgounds from product planning to design, his experience enhances the overall quality of Samsung DRAM products.
Since 2023, he has been leading the DRAM Product & Technology of the Samsung memory division. His current research interests include architecture for next-generation DRAM and product development utilizing new process technology for new product line-up.
Gary Howarth
Gary Howarth is a Physical Scientist for the Privacy Engineering Program and the Public Safety Communications Research Division at the National Institute of Standards and Technology. In that role, he develops and implements programs designed to inform practical implementations of technology. He has a particular interest in the adoption of privacy-enhancing technologies. He earned his PhD in the Chemistry Department at Columbia University. He has previously taught high school science and co-founded the NET Charter High School in New Orleans. Gary lives with his wife and daughter in Rhode Island.
Ricardo Gallo
Alejandro Vasconcelos
